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FMG2G50US120
IGBT
FMG2G50US120
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required.
Features
* * * * * * Short Circuit Rated Time; 10us @ TC =100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204
Package Code : 7PM-GA
Application
* * * * * AC & DC Motor Controls General Purpose Inverters Weldings Servo Controls UPS
C1
E1/C2
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M5
@ TC = 100C
FMG2G50US120 1200 20 50 100 50 100 320 10 -40 to +150 -40 to +125 2500 4.0 4.0
Units V V A A A A W us C C V N.m N.m
@ AC 1minute
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
FMG2G50US120
Electrical Characteristics of IGBT
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 100 V V/C mA nA
On Characteristics
VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC =50mA, VCE = VGE IC = 50A, VGE = 15V 5.0 -7.0 2.6 8.5 3.0 V V
Switching Characteristics
td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC =50A, RG = 10, VGE = 15V, Inductive Load, TC = 25C ------------10 ---180 80 400 65 4.68 3.48 175 75 390 120 5.6 4.4 -400 60 210 ---150 ------------ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC
VCC = 600 V, IC = 50A, RG =10, VGE = 15V, Inductive Load, TC = 125C VCC = 600 V, VGE = 15V 100C
@ TC =
VCE = 300 V, IC =50A, VGE = 15V
Electrical Characteristics of DIODE
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
TC = 25C unless otherwise noted
Test Conditions IF = 50A TC = 25C TC = 125C TC = 25C TC = 125C IF = 50A di / dt = 700 A/us TC = 25C TC = 125C TC = 25C TC = 125C
Min. ---------
Typ. 2.3 2.2 160 220 29 36 2320 3960
Max. 3.0 --------
Unit s V ns A nC
Thermal Characteristics
Symbol RJC RJC RJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.035 240 Max. 0.39 0.47 --Units C/W C/W C/W g
(c)2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
FMG2G50US120
100
Common Emitter VGE = 15V TC = 25 TC = 125 ------
100
Common Emitter TC = 25 20V 15V
80
80
[A]
C
C o ll e c t o r C u r r e n t , I
C o ll e c t o r C u r r e n t , I
C
[A]
60
60
12V
40
40
VGE = 10V
20
20
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
CE
0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5
CE
3.0
3.5
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
100
Common Emitter TC = 125 20V
5.0 4.5
Common Emitter VGE = 15V
[A]
[A] C o ll e c t o r C u r r e n t , I
C
80
C
15V
4.0 3.5 3.0 2.5 2.0 1.5
80A
C o ll e c t o r C u r r e n t , I
60
12V
40
VGE = 10V
50A IC = 30A
20
0 0.0 0.5 1.0 1.5 2.0 2.5
CE
1.0
3.0 3.5
25
50
75
C
100
125
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
C ase T e m p erature, T
[0C ]
Fig 3. Typical Saturation Voltage Characteristics
Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level
1000
S w it c h i n g T i m e [ n s ]
S w it c h i n g T i m e [ n s ]
Common Emitter VGE = 15 V, RG = 10 TC = 25 TC = 125 ------
1000
Common Emitter VGE = 15 V, RG = 10 TC = 25 TC = 125 ------
Ton
T o ff
Tr 100
100
Tf
30
40
50
60
C
70
80
30
40
50
60
C
70
80
C o ll e c t o r C u r r e n t , I
[A]
C o ll e c t o r C u r r e n t , I
[A]
Fig 5. Turn-On Characteristics vs. Collector Current
(c)2004 Fairchild Semiconductor Corporation
Fig 6. Turn-Off Characteristics vs. Collector Current
FMG2G50US120 Rev. A
FMG2G50US120
14 12
Common Emitter VGE = 15 V, RG = 10 TC = 25 TC = 125 -----Common Emitter VCC = 600 V, VGE = 15 V IC = 50 A TC = 25 TC = 125 ------
1000 Eon
S w it c h i n g L o s s [ m J ]
10 8 6
S w it c h i n g T i m e [ n s ]
Ton
E o ff 4 2 0 30 40 50 60
C
Tr 100
70
80
0
6
12
18
24
G
30
36
42
C o ll e c t o r C u r r e n t , I
[A]
G ate R e sista n c e, R
[
]
Fig 7. Switching Loss vs. Collector Current
Fig 8. Turn-on Characteristics vs. Gate Resistance
15
S w it c h i n g T i m e [ n s ]
S w it c h i n g l o s s [ m J ]
1000
Common Emitter VCC = 600 V, VGE = 15 V IC = 50 A TC = 25 TC = 125 ------
12 T o ff
Common Emitter VCC = 600 V, VGE = 15 V IC = 50 A TC = 25 TC = 125 ------
9 Eon 6 E o ff 3
100
Tf
0 0 6 12 18 24 30
G
36
42
0
6
12
18
24
G
30
36
42
G ate R e sista n c e, R
[
]
G ate R e sista n c e, R
[
]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
15
Common Emitter RL = 12 VCE = 600V TC = 25
120 100
Common Cathode VGE = 0V TC = 25 TC = 125
[V]
[A] Forward Current, I
F
12
GE
80 60 40 20 0
Gate - Emitter Voltage, V
6 3 0
9
0
50
100
150
200
250
300
350
400
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate Charge, Qg [ nC ]
Forward Voltage, VF [V]
Fig 11. Gate Charge Characteristics
(c)2004 Fairchild Semiconductor Corporation
Fig 12. Forward Characteristics(diode)
FMG2G50US120 Rev. A
FMG2G50US120
Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [ns]
1000
Common Cathode di/dt = 700A/ TC = 25 TC = 125 ------Trr
100
Irr
10
20
30
40
50
60
70
80
Forward Current, IF [A]
Fig 13. Reverse Recovery Characteristics(diode)
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation FMG2G50US120 Rev. A
FMG2G50US120
Package Dimension
7PM-GA
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation FMG2G50US120 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
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SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I11

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